The 200 MHz- and 1.5 GHz-band GaAs monolithic quadrature modulator ICs

Author

Maemura, K. ; Kohno, Y. ; Nakano, H. ; Shimura, T. ; Oki, K. ; Ishida, H. ; Ishihara, O.

Author_Institution

Mitsubishi Electric Corp., Hyogo, Japan

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

283

Lastpage

286

Abstract

The 200-MHz and 1.5-GHz-band quadrature modulator ICs are developed. The ICs integrate a digital frequency divider, double-balanced FET mixers, and a combiner. The power consumptions of the 200-MHz- and 1.5-GHz-band modulator ICs are 100 mW and 160 mW, respectively. These ICs realize low distortion below -50 dBc, and low image and carrier rejections below -40 dBc and they reduce the phase-error to less than 1.1 degrees . The modulator ICs have excellent spectrum efficiency and are useful in realization of small-size and lightweight handy radio telephone equipment. Circuit design, fabrication process, and device performance are outlined.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; modulators; 1.5 GHz; 100 mW; 160 mW; 200 MHz; GaAs; LDD SAG FET process; combiner; device performance; digital frequency divider; double-balanced FET mixers; fabrication process; monolithic IC; quadrature modulator ICs; Digital communication; Driver circuits; Energy consumption; FETs; Frequency conversion; Gallium arsenide; Microwave devices; Phase distortion; Phase modulation; Signal generators;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175508

Filename

175508