DocumentCode
2817334
Title
TCAD Challenges in the Nanotechnology Era
Author
Giles, Martin D.
Author_Institution
Technology CAD, Design & Technology Solutions, Intel Corporation, RA3-254, 2501 NW 229th Avenue, Hillsboro, OR 95124, USA. E-mail: Martin. D.Giles@intel.com
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
7
Lastpage
12
Abstract
TCAD process and device modeling has become an essential component of advanced technology development, delivering physical insight into processes and device operation and enabling development and optimization of technology flows. This paper highlights emerging challenges in extending these capabilities into the nanotechnology era, and the opportunities for a hierarchical, physically-based modeling approach to impact the direction of nanotechnology development.
Keywords
Annealing; CMOS technology; Design automation; Electronics industry; Ion implantation; Nanotechnology; Semiconductor device modeling; Semiconductor process modeling; Silicon; Standards development;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201460
Filename
1562012
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