• DocumentCode
    2817403
  • Title

    Sensitivity of 2 Gb DDR2 SDRAMs to Protons and Heavy Ions

  • Author

    Koga, R. ; Yu, P. ; George, J. ; Bielat, S.

  • Author_Institution
    Aerosp. Corp., El Segundo, CA, USA
  • fYear
    2010
  • fDate
    20-23 July 2010
  • Firstpage
    6
  • Lastpage
    6
  • Abstract
    SEE sensitivity to protons and heavy ions is examined with several 2 Gb DDR2 SDRAM device types. Upsets in memory elements as well as in control circuit sections have been measured.
  • Keywords
    DRAM chips; ions; protons; DDR2 SDRAM; control circuit sections; heavy ions; memory elements; protons ions; single event effects sensitivity; synchronous dynamic random access memories; Energy states; Ions; Protons; Radiation effects; SDRAM; Sensitivity; Uncertainty;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2010 IEEE
  • Conference_Location
    Denver, CO
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4244-8405-8
  • Type

    conf

  • DOI
    10.1109/REDW.2010.5619491
  • Filename
    5619491
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2817403