• DocumentCode
    2817655
  • Title

    Single Event and Low Dose-Rate TID Effects in the DS16F95 RS-485 Transceiver

  • Author

    Kelly, Andrew T. ; Fleming, Patrick R. ; Brown, Ronald D. ; Wong, Frankie

  • Author_Institution
    BAE Syst. Space Products & Syst., Manassas, VA, USA
  • fYear
    2010
  • fDate
    20-23 July 2010
  • Firstpage
    6
  • Lastpage
    6
  • Abstract
    Characterization of single event and low dose-rate TID effects in National Semiconductor´s DS16F95 Radiation-Hardened RS-485 Transceiver is eported. Onset LET for upsetof less than 5 MeV-cm2/mg was observed, and a dependency on operating condition was established. Samples under ELDRS nvestigation adhered to electrical specification after irradiation to 30 krd(Si) at 10 mrd(Si)/s.
  • Keywords
    transceivers; DS16F95 RS-485 transceiver; Onset LET; TID effects; Driver circuits; Monitoring; Radiation effects; Receivers; Temperature measurement; Testing; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2010 IEEE
  • Conference_Location
    Denver, CO
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4244-8405-8
  • Type

    conf

  • DOI
    10.1109/REDW.2010.5619503
  • Filename
    5619503
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2817655