InGaAs photodetector with integrated biasing network for mm-wave applications

Author

Trommer, D. ; Umbach, A. ; Unterborsch, Gunter

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

fYear

1998

fDate

11-15 May 1998

Firstpage

276

Lastpage

279

Abstract

ξA waveguide integrated photodetector with an integrated biasing network is presented. The external responsivity amounts to 0.3 A/W while the bandwidth is 70 GHz. The integration of a matching resistor significantly reduces the output standing wave ratio. Application of the photodetector in a mm-wave system experiment is demonstrated. Linear operation at 64 GHz up to power levels of +10 dBm was achieved

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; microwave links; microwave photonics; millimetre wave detectors; mobile communication; optical planar waveguides; optical receivers; p-i-n photodiodes; photodetectors; 64 GHz; 70 GHz; InGaAs; bandwidth; external responsivity; integrated biasing network; linear operation; output standing wave ratio; waveguide integrated photodetector; Bandwidth; Contact resistance; Indium gallium arsenide; Indium phosphide; Optical modulation; Optical surface waves; Optical waveguides; Parasitic capacitance; Photodetectors; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712456

Filename

712456