Title :
InGaAs photodetector with integrated biasing network for mm-wave applications
Author :
Trommer, D. ; Umbach, A. ; Unterborsch, Gunter
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
ξA waveguide integrated photodetector with an integrated biasing network is presented. The external responsivity amounts to 0.3 A/W while the bandwidth is 70 GHz. The integration of a matching resistor significantly reduces the output standing wave ratio. Application of the photodetector in a mm-wave system experiment is demonstrated. Linear operation at 64 GHz up to power levels of +10 dBm was achieved
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; microwave links; microwave photonics; millimetre wave detectors; mobile communication; optical planar waveguides; optical receivers; p-i-n photodiodes; photodetectors; 64 GHz; 70 GHz; InGaAs; bandwidth; external responsivity; integrated biasing network; linear operation; output standing wave ratio; waveguide integrated photodetector; Bandwidth; Contact resistance; Indium gallium arsenide; Indium phosphide; Optical modulation; Optical surface waves; Optical waveguides; Parasitic capacitance; Photodetectors; Resistors;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712456
