Title :
An all-epitaxial InP-based 1.55 μm VCSEL process with defect-free AlxOy/GaAs distributed Bragg reflector mirrors
Author :
Gebretsadik, H. ; Kamath, K. ; Bhattacharya, P. ; Caneau, C. ; Bhat, R.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A 1.55 μm InP-based vertical cavity surface emitting laser process, which uses growth of defect-free Al(Ga)As/GaAs distributed Bragg reflector mirrors on patterned InP-based heterostructures was designed. This new mirror technology enabled the formation of a short-stack AlxOy/GaAs DBR mirror. In addition, the formation of a dielectric aperture by the partial oxidation of lattice-matched InAlAs was characterized and incorporated into the process
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser mirrors; oxidation; quantum well lasers; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; 1.55 mum; AlGaAs-GaAs; InGaAsP-InP; MOVPE; MQW active region; VCSEL; dielectric aperture; distributed Bragg reflector mirrors; partial oxidation; patterned InP-based heterostructures; short-stack mirror; Apertures; Dielectrics; Distributed Bragg reflectors; Gallium arsenide; Indium compounds; Mirrors; Optical design; Oxidation; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712464
