Title :
Calibrated Mobility Corrections for Drift Diffusion Simulation of Strained MOSFET Devices.
Author :
Villanueva, D. ; Dray, A. ; Orain, S. ; Fiori, V. ; Ortolland, C. ; Fuchs, E. ; Salvetti, Federica ; Juge, A.
Author_Institution :
Philips Semiconductors, 860 rue Jean Monnet 38920 Crolles, France, +33 (0) 4 38 92 26 49, davy.villanueva@philipscrolles.st.com
Abstract :
In this paper, simple corrections to traditional Drift-Diffusion mobility models are derived from strained full-band Monte Carlo simulations in order to correctly account for strain effects. The validity of this approach is benchmarked upon Monte Carlo MOSFET simulations as well as experimental data featuring tensile nitride capping layers.
Keywords :
Capacitive sensors; Compressive stress; Doping; MOSFET circuits; Monte Carlo methods; Region 1; Scattering; Semiconductor films; Silicon; Tensile stress;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
DOI :
10.1109/SISPAD.2005.201537
