Design and Characterization of a V-Band Quadrature VCO Based on a Common-Collector SiGe Colpitts VCO

Author

Barghouthi, Atheer ; Krause, Anna ; Carta, Corrado ; Scheytt, Christoph ; Ellinger, Frank

Author_Institution

Dept. of Circuit Design & Network Theor., Dresden Univ. of Technol., Dresden, Germany

fYear

2010

fDate

3-6 Oct. 2010

Firstpage

1

Lastpage

3

Abstract

Design and characterization of a 60 GHz quadrature VCO on a 0.25u BiCMOS technology, featuring 180 GHz f_t HBTs, is presented. The QVCO is based on the coupling of two differential common collector Colpitts VCOs. At a DC bias voltage of 2 V and current consumption of 32 mA, each output delivers -13 ± 1.5 dBm of power. An excellent phase noise performance in the range of -101 to -96 dBc/Hz at 1 MHz offset was measured in a tuning bandwidth of 2.3 GHz, from 59.7 to 62 GHz. To the knowledge of the authors, this is the best phase noise performance reported for a silicon 60 GHz QVCO.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; phase noise; voltage-controlled oscillators; BiCMOS technology; QVCO; SiGe; SiGe Colpitts VCO; V-band quadrature VCO; bandwidth 2.3 GHz; bandwidth 59.7 GHz to 62 GHz; current 32 mA; frequency 1 MHz; frequency 180 GHz; frequency 60 GHz; phase noise; size 0.25 micron; voltage 2 V; Bandwidth; Couplings; Integrated circuit modeling; Phase noise; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE

Conference_Location

Monterey, CA

ISSN

1550-8781

Print_ISBN

978-1-4244-7437-0

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2010.5619653

Filename

5619653