Title :
Developing GaN HEMTs for Ka-Band with 20W
Author :
Takagi, Kazutaka ; Matsushita, Keiichi ; Kashiwabara, Yasushi ; Masuda, Kazutoshi ; Nakanishi, Shinichiro ; Sakurai, Hiroyuki ; Onodera, Ken ; Kawasaki, Hisao ; Takada, Yoshiharu ; Tsuda, Kunio
Author_Institution :
Microwave Solid-state Eng. Dept., Toshiba Corp., Kawasaki, Japan
Abstract :
AlGaN/GaN High Electron Mobility Transistors(HEMTs) were developed for Ka-band. The developed device showed 138 GHz of fmax, which depended on the thickness of the AlGaN barrier layer and the gate length. It had a 6.4 mm gate periphery on a metal carrier plate. The output power achieved 20 W with impedance matching circuits.
Keywords :
III-V semiconductors; high electron mobility transistors; impedance matching; millimetre wave transistors; AlGaN; GaN; HEMT; Ka-band; frequency 138 GHz; high electron mobility transistors; impedance matching circuits; power 20 W; size 6.4 mm; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MMICs; MODFETs; Power generation;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-7437-0
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2010.5619660
