DocumentCode
282010
Title
Mode-locked external fibre cavity InGaAsP semiconductor lasers
Author
Burns, D. ; Baker, R.A. ; Crust, D.W. ; Byron, K.C. ; Sibbett, W.
Author_Institution
Dept. of Phys. & Astron., St. Andrews Univ., UK
fYear
1989
fDate
32654
Firstpage
42675
Lastpage
42678
Abstract
The characteristics of mode-locked external fibre cavity InGaAsP lasers have been studied. Two mode-locking techniques are described and an explanation of the distinct pulse forming kinetics in these systems is presented. Sub-10 ps duration relatively high peak power optical pulses have been regularly generated, and noisy subpulse effects have been successfully suppressed. Amplification of these pulses using an erbium-doped fibre amplifier has generated pulses of >3 W peak power
Keywords
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; laser cavity resonators; laser mode locking; optical fibres; semiconductor junction lasers; Er doped fibre amplifier; InGaAsP; high peak power optical pulses; mode-locked external fibre cavity; noisy subpulse effect suppression; optical fibres; semiconductor lasers; sub-10 ps optical pulses; ultrashort pulses;
fLanguage
English
Publisher
iet
Conference_Titel
Applications of Ultrashort Pulses for Optoelectronics, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
198529
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