DocumentCode
2820163
Title
Mixed-Signal Circuits Using 250nm InP HBT Technology Integrated with 90nm CMOS
Author
Elliott, K.R. ; Baringer, C. ; Li, James C. ; Royter, Y. ; Patterson, P.R. ; Hussain, T.
Author_Institution
Microelectron. Lab., HRL Labs. LLC, Malibu, CA, USA
fYear
2010
fDate
3-6 Oct. 2010
Firstpage
1
Lastpage
3
Abstract
Digital Analog converters using InP HBTs and 90nm CMOS have been designed using the novel HRL integration process developed under the DARPA COSMOS program. These circuits demonstrate that this process is capable of providing a compelling alternative to traditional Si/SiGe BiCMOS implementations for producing highly integrated state-of-the-art mixed signal and digitally-assisted analog circuits.
Keywords
CMOS integrated circuits; digital-analogue conversion; heterojunction bipolar transistors; indium compounds; mixed analogue-digital integrated circuits; CMOS; DARPA COSMOS program; HBT technology; HRL integration process; InP; digital analog converters; mixed-signal circuits; size 250 nm; size 90 nm; CMOS integrated circuits; Heterojunction bipolar transistors; Indium phosphide; Libraries; Semiconductor device modeling; Silicon; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE
Conference_Location
Monterey, CA
ISSN
1550-8781
Print_ISBN
978-1-4244-7437-0
Electronic_ISBN
1550-8781
Type
conf
DOI
10.1109/CSICS.2010.5619668
Filename
5619668
Link To Document