• DocumentCode
    2820744
  • Title

    SEU Testing of SiGe Bipolar and BiCMOS Circuits

  • Author

    Hansen, David L. ; Le, Anthony ; Chesnut, Kay ; Miller, Eric ; Pong, Steven ; Sung, Sichul ; Truong, John

  • Author_Institution
    Boeing Space & Intell. Syst., Los Angeles, CA, USA
  • fYear
    2010
  • fDate
    20-23 July 2010
  • Firstpage
    6
  • Lastpage
    6
  • Abstract
    Bipolar and BiCMOS divider circuits were tested using heavy ions to determine their sensitivity to single-event effects (SEE) in terms of differences in cross-section and upset duration. No single-event latchups (SEL) were observed under any conditions. A triple-mode-redundant (TMR) design was found to be effective in reducing the SEE cross section and preventing phase-shift upsets which were the dominant upset type in the non-hardened design.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; bipolar integrated circuits; dividing circuits; logic design; logic testing; BiCMOS circuits; SEU testing; SiGe; bipolar circuits; divider circuits; heavy ions; phase-shift upsets; single-event effects; single-event latchups; triple-mode-redundant design; BiCMOS integrated circuits; Bit error rate; CMOS integrated circuits; Clocks; Radiation effects; Silicon germanium; Tunneling magnetoresistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2010 IEEE
  • Conference_Location
    Denver, CO
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4244-8405-8
  • Type

    conf

  • DOI
    10.1109/REDW.2010.5619701
  • Filename
    5619701
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2820744