Title :
A capacitance-voltage measurement method for DMOS transistor channel length extraction
Author :
Olsson, J. ; Valtonen, R. ; Heinle, U. ; Vestling, L. ; Söderbärg, A. ; Norde, H
Author_Institution :
Angstrom Lab., Uppsala Univ., Sweden
Abstract :
This paper reports a new measurement method for extraction of sub-micrometer channel lengths in DMOS transistors. The method is based on capacitance-voltage measurements of the gate to source, gate to p-base and gate to drain capacitances. A channel length of 0.3 μm has been measured on DMOS transistors. Numerical device simulations and small-signal capacitance simulations support the results and the measurement principle
Keywords :
MOSFET; capacitance; numerical analysis; semiconductor device measurement; semiconductor device models; 0.3 micron; DMOS transistor channel length extraction; DMOS transistors; capacitance-voltage measurement; capacitance-voltage measurement method; channel length; gate to drain capacitance; gate to p-base capacitance; gate to source capacitance; measurement method; measurement principle; numerical device simulations; small-signal capacitance simulations; Capacitance measurement; Capacitance-voltage characteristics; Doping; Electric variables measurement; Length measurement; MOSFETs; Numerical simulation; Testing; Threshold voltage; Transistors;
Conference_Titel :
Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
Conference_Location :
Goteborg
Print_ISBN :
0-7803-5270-X
DOI :
10.1109/ICMTS.1999.766231
