• DocumentCode
    2822016
  • Title

    Low-power word-parallel nearest-Hamming-distance search circuit based on frequency mapping

  • Author

    Mattausch, Hans Jürgen ; Imafuku, Wataru ; Ansari, Tania ; Kawabata, Akio ; Koide, Tetsushi

  • Author_Institution
    Res. Inst. for Nanodevice & Bio Syst., Hiroshima Univ., Higashi-Hiroshima, Japan
  • fYear
    2010
  • fDate
    14-16 Sept. 2010
  • Firstpage
    538
  • Lastpage
    541
  • Abstract
    Distance-frequency mapping with ring oscillators, adjustable in discrete steps, enables fast word-parallel nearest-Hamming-distance search with low power consumption. High robustness against fabrication-related variations of the MOSFET characteristics is achieved in addition. A test chip in 180 nm CMOS technology with 64 words, each consisting of 256 bits, consumes less than 36.5 mW and 307 μW at supply voltages of 1.8 and 0.7 V, respectively. In comparison to previous digital designs, power dissipation is 5 times smaller, while search speed from 50ns to 245ns for Hamming distances from 0 to 256 is approximately equal.
  • Keywords
    CMOS integrated circuits; MOSFET; low-power electronics; oscillators; CMOS technology; MOSFET; distance-frequency mapping; low-power word-parallel nearest-Hamming-distance search circuit; power 307 muW; power 36.5 mW; ring oscillators; size 180 nm; voltage 0.7 V; voltage 1.8 V; word length 256 bit; CMOS integrated circuits; Delay; Frequency measurement; Power dissipation; Ring oscillators; Time domain analysis; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ESSCIRC, 2010 Proceedings of the
  • Conference_Location
    Seville
  • ISSN
    1930-8833
  • Print_ISBN
    978-1-4244-6662-7
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.2010.5619762
  • Filename
    5619762