Title :
Low-power word-parallel nearest-Hamming-distance search circuit based on frequency mapping
Author :
Mattausch, Hans Jürgen ; Imafuku, Wataru ; Ansari, Tania ; Kawabata, Akio ; Koide, Tetsushi
Author_Institution :
Res. Inst. for Nanodevice & Bio Syst., Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
Distance-frequency mapping with ring oscillators, adjustable in discrete steps, enables fast word-parallel nearest-Hamming-distance search with low power consumption. High robustness against fabrication-related variations of the MOSFET characteristics is achieved in addition. A test chip in 180 nm CMOS technology with 64 words, each consisting of 256 bits, consumes less than 36.5 mW and 307 μW at supply voltages of 1.8 and 0.7 V, respectively. In comparison to previous digital designs, power dissipation is 5 times smaller, while search speed from 50ns to 245ns for Hamming distances from 0 to 256 is approximately equal.
Keywords :
CMOS integrated circuits; MOSFET; low-power electronics; oscillators; CMOS technology; MOSFET; distance-frequency mapping; low-power word-parallel nearest-Hamming-distance search circuit; power 307 muW; power 36.5 mW; ring oscillators; size 180 nm; voltage 0.7 V; voltage 1.8 V; word length 256 bit; CMOS integrated circuits; Delay; Frequency measurement; Power dissipation; Ring oscillators; Time domain analysis; Voltage measurement;
Conference_Titel :
ESSCIRC, 2010 Proceedings of the
Conference_Location :
Seville
Print_ISBN :
978-1-4244-6662-7
DOI :
10.1109/ESSCIRC.2010.5619762