• DocumentCode
    2823481
  • Title

    A low-power orthogonal current-reuse amplifier for parallel sensing applications

  • Author

    Johnson, Bryant ; DeTomaso, David ; Molnar, Alyosha

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
  • fYear
    2010
  • fDate
    14-16 Sept. 2010
  • Firstpage
    318
  • Lastpage
    321
  • Abstract
    We demonstrate a low-noise CMOS amplifier array using orthogonal bias current-reuse to improve fundamental noise-power trade-offs. The architecture presented uses stacking to share bias current among the input differential pairs of four amplifiers. By using the output drain currents of each differential pair as tail currents for the next stage, we save bias current. By arranging the stacked differential pairs appropriately, we generate 16 output currents that encode the original inputs in a linearly independent (orthogonal) fashion. These outputs are then recombined in much lower power output stages to reconstruct amplified versions of the inputs. Our design was built in standard 130nm CMOS and has a noise efficiency factor (NEF) of 2.7, close to the lowest published for a differential amplifier. However, amortizing bias current across the 4 parallel amplifier paths in the NEF calculation yields an effective NEF of 1.54. The input-referred noise ranges from 14.5 ßVrms to 17.4 /iVrm. between amplifiers in the stack over bandwidths of 426 kHz to 530.2 kHz while consuming a total power of 19.6 μ-W, or 4.9 μW per path. Orthogonal biasing avoids cross-talk between stacked amplifier paths, providing isolation of 37 dB or better.
  • Keywords
    CMOS integrated circuits; differential amplifiers; low-power electronics; bandwidth 426 kHz to 530.2 kHz; differential amplifier; input differential pairs; low-noise CMOS amplifier array; low-power orthogonal current-reuse amplifier; noise efficiency factor; noise-power trade-off; orthogonal bias current-reuse; output drain currents; parallel sensing applications; power 19.6 muW; power 4.9 muW; size 130 nm; tail current; Bandwidth; Crosstalk; Gain; Mirrors; Noise; Stacking; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ESSCIRC, 2010 Proceedings of the
  • Conference_Location
    Seville
  • ISSN
    1930-8833
  • Print_ISBN
    978-1-4244-6662-7
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.2010.5619839
  • Filename
    5619839