A dual-band SiGe BiCMOS offset PLL for EGSM 900 MHz and DCS 1800 MHz cellular transmitters

Author

Elhak, Hany Y. ; Helmy, Ahmed ; Aboueldahab, Waleed F. ; Abdelrheem, Tamer A. ; Saad, Ahmed ; Hafez, Amr

Author_Institution

MEMSCAP Egypt, Cairo, Egypt

Volume

3

fYear

2003

fDate

27-30 Dec. 2003

Firstpage

1158

Abstract

A fully integrated dual-band offset phase-locked loop (OPLL) for EGSM 900 MHz and DCS 1800 MHz standards is presented. The system is implemented in a 0.35μm SiGe BiCMOS technology with f_T of 60 GHz, featuring integrated colpitts VCOs with above-IC thick copper spirals. Simulation results indicate that all EGSM and DCS specifications are met over a temperature range from -20 to 80 °C and power supply range from 2.7 to 3.3 volts. The chip consumes 112 mW and 114 mW in the EGSM and DCS bands respectively.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; cellular radio; millimetre wave integrated circuits; phase locked loops; radio transmitters; voltage-controlled oscillators; 0.35 micron; 112 mW; 114 mW; 1800 MHz; 2.7 to 3.3 V; 60 GHz; 900 MHz; DCS standards; EGSM standards; OPLL; SiGe; SiGe BiCMOS technology; VCO; above-IC thick copper spirals; cellular transmitters; dual-band SiGe BiCMOS; offset PLL; offset phase-locked loop; power supply range; BiCMOS integrated circuits; Copper; Distributed control; Dual band; Germanium silicon alloys; Phase locked loops; Silicon germanium; Spirals; Temperature distribution; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003 IEEE 46th Midwest Symposium on

ISSN

1548-3746

Print_ISBN

0-7803-8294-3

Type

conf

DOI

10.1109/MWSCAS.2003.1562499

Filename

1562499