Transconductor/multiplier circuits for gallium arsenide technology. II. Practical circuit design

Author

Toumazo, C. ; Haigh, D.G. ; Fopma, J.M.

Author_Institution

Dept. of Electr. Eng., Imperial Coll. of Sci. Technol. & Med., London, UK

fYear

1991

fDate

11-14 Jun 1991

Firstpage

2991

Abstract

For pt.I see ibid., p.2999-3002 (1991). Key circuit techniques are developed for the modification of high frequency, transconductor/multiplier circuit building blocks. A semi-nonlinear analysis technique is developed and a novel technique for cascoding such circuits is presented. The techniques are illustrated by application to a four-quadrant analog multiplier

Keywords

III-V semiconductors; Schottky gate field effect transistors; active networks; analogue circuits; field effect integrated circuits; gallium arsenide; multiplying circuits; semiconductor device models; GaAs; GaAs MESFETs; VCCS; cascoding; circuit techniques; four-quadrant analog multiplier; multiplier circuits; semi-nonlinear analysis technique; semiconductors; transconductor circuits; Circuit synthesis; Current measurement; Educational institutions; Filters; Frequency; Gallium arsenide; MESFET circuits; Transconductance; Transconductors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1991., IEEE International Sympoisum on

Print_ISBN

0-7803-0050-5

Type

conf

DOI

10.1109/ISCAS.1991.176175

Filename

176175

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2824176