Design of a fully integrated concurrent triple-band CMOS low noise amplifier

A fully integrated concurrent triple-band low noise amplifier (LNA) is designed and presented in this paper. It has been fabricated using TSMC 0.25-μm mixed-signal CMOS process. A two stage topology with bias-current reuse technique has been used to simultaneously achieve high gain and good matching without large amount of power consumption at all three desired band -1.8GHz, 2.45GHz and 5.25GHz. It also achieves similar good performance at these three different frequencies. We will show its post simulation results to demonstrate this good performance. The LNA exhibits input matching to 50ohm with S₁₁ of -10.6dB at 1.8GHz, -10.4dB at 2.45GHz and -19.9dB at 5.25GHz as well as output matching to 50ohm with S₂₂of -15.5dB, -12.5dB and -12.0dB, respectively. And it provides forward gain (S₂₁) of 10.1dB, 10.8dB and 11.8dB with noise figure of 3.72dB, 4.76dB and 6.38dB respectively while drawing 39mW from a 2.5V supply voltage.