A low voltage single-balanced down-conversion transformer coupled mixer

Author

Helmy, Ahmed ; Sharaf, Khaled ; Mhani, Ahmed ; Ragai, Hani

Author_Institution

Ain-Shams Univ., Cairo, Egypt

Volume

3

fYear

2003

fDate

27-30 Dec. 2003

Firstpage

1243

Abstract

A 900 MHz single balanced mixer utilizing an above IC (AIC) transformer as an RF coupling device has been implemented using a 0.8 μm SiGe BiCMOS process. The 1.73×2 mm² chip is packaged in an SSOP20 ceramic package and operates at a low supply voltage of 1-2 V. The mixer utilizes a minimum number of off chip components for matching at the RF port. At 900 MHz and 2 V supply voltage, the mixer dissipates 4 mA, provides a 9.3 dB power gain, 7.88 dB noise figure (NF) and a 3 dBm input intercept point (IIP3). The same design is implemented using an off chip transformer.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; ceramic packaging; coupled circuits; inductance; integrated circuit design; mixers (circuits); transformers; 0.8 micron; 1 to 2 V; 1.73 mm; 2 mm; 4 mA; 7.88 dB; 9.3 dB; 900 MHz; BiCMOS; RF coupling device; SSOP20 ceramic package; SiGe; above IC transformer; coupled mixer; down conversion transformer; off chip transformer; single balanced mix; BiCMOS integrated circuits; Ceramics; Gain; Germanium silicon alloys; Low voltage; Noise figure; Packaging; Radio frequency; Radiofrequency integrated circuits; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003 IEEE 46th Midwest Symposium on

ISSN

1548-3746

Print_ISBN

0-7803-8294-3

Type

conf

DOI

10.1109/MWSCAS.2003.1562520

Filename

1562520