Title :
Influence of Gate Bias on Surface Roughness Scattering Rate in GaAs/AlAs Transistor Structure
Author :
Borzdov, A. ; Pozdnyakov, D. ; Galenchik, V. ; Borzdov, V.
Author_Institution :
Belarus State Univ., Minsk
Abstract :
The self-consistent calculation of surface roughness scattering rate in GaAs/AlAs transistor structure with one-dimensional electron gas has been performed taking into account the collisional broadening. The influence of the gate bias on the scattering rate is also studied
Keywords :
III-V semiconductors; SCF calculations; aluminium compounds; electron gas; gallium arsenide; semiconductor device models; surface roughness; surface scattering; transistors; GaAs-AlAs; one-dimensional electron gas; quantum wires; self-consistent calculation; semiconductor transistor structure; surface roughness scattering rate; Electrons; Gallium arsenide; Rough surfaces; Scattering; Surface roughness;
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
DOI :
10.1109/CRMICO.2006.256145
