DocumentCode :
2827660
Title :
Metal contacts to MoS2: A two-dimensional semiconductor
Author :
Neal, Adam T. ; Liu, Han ; Gu, J.J. ; Ye, P.D.
Author_Institution :
Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
fYear :
2012
fDate :
18-20 June 2012
Firstpage :
65
Lastpage :
66
Abstract :
With increasing demands for electrostatic control as scaling continues in today´s transistors, low dimensional structures continue to gain attention as a pathway for future device scaling because they offer excellent electrostatic control while remaining compatible with straightforward lithography techniques. In particular, MoS2 has attracted interest for transistor applications because its large band gap allows for field effect devices with low off-current, unlike graphene [1]. One key bottleneck, however, is the realization of ohmic contacts on MoS2 to improve FET device on-state performance. With this in mind, we evaluate Ni and Pd contacts on MoS2 as potential alternatives to the already realized Au-MoS2 and Ti-MoS2 contacts [1]. Back-gated transfer length method (TLM) structures with Au, Ni, and Pd contact metals were fabricated on exfoliated MoS2 flakes, with 300nm SiO2 on degenerately doped Si as the substrate. The data indicate that Ni, like Au, makes an ohmic contact to the n-doped MoS2 while the Pd metal contact shows Schottky behavior.
Keywords :
Schottky barriers; field effect transistors; gold; graphene; lithography; molybdenum compounds; nickel; ohmic contacts; palladium; Au; FET device on-state performance; MoS2; Ni; Pd; Schottky behavior; TLM structures; back-gated transfer length method structures; band gap; contact metals; device scaling; excellent electrostatic control; field effect devices; gain attention; graphene; low dimensional structures; metal contacts; ohmic contacts; straightforward lithography techniques; transistor applications; transistors; two-dimensional semiconductor; Educational institutions; Gold; Nickel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
ISSN :
1548-3770
Print_ISBN :
978-1-4673-1163-2
Type :
conf
DOI :
10.1109/DRC.2012.6256928
Filename :
6256928
Link To Document :
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