Title :
Novel double layer graphene transistors-bilayer pseudospin FETs and 2D-2D tunnel FETs
Author :
Banerjee, S.K. ; Register, L.F. ; Tutuc, E. ; Reddy, D. ; Kim, S. ; Basu, D. ; Corbet, C. ; Colombo, L. ; Carpenter, G. ; MacDonald, A.H.
Author_Institution :
Univ. of Texas at Austin, Austin, TX, USA
Abstract :
In this paper, bilayer pseudospin FET (BiSFET) is fabricated and tested for the condensate using Coulomb drag measurements in the double layer graphene system. The basic BiSFET structure can also be used as 2D-2D single particle tunnel FET, and the single particle h-h and e-e 2D-2D tunnel FETs, which is graphene´s single-atom thickness could lead to more ideal interlayer tunneling characteristics provided the layers can be aligned. Single particle tunneling current calculations have been performed which show NDR characteristics, reminiscent of the BiSFET, albeit with higher operating powers.
Keywords :
field effect transistors; graphene; BiSFET structure; Coulomb drag measurement; NDR characteristics; bilayer pseudospin FET; double layer graphene system; double layer graphene transistor; graphene single-atom thickness; interlayer tunneling characteristics; single particle e-e 2D-2D tunnel FET; single particle h-h 2D-2D tunnel FET; single particle tunneling current calculation; CMOS integrated circuits; Educational institutions; Logic gates; SPICE;
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6256938
