Title :
Mobility and scattering mechanisms in buried InGaSb quantum well channels integrated with in-situ MBE grown gate oxide
Author :
Madisetti, S. ; Nagaiah, P. ; Chidambaram, T. ; Tokranov, V. ; Yakimov, M. ; Oktyabrsky, S.
Author_Institution :
Coll. of Nanoscale Sci. & Eng., Univ. at Albany- SUNY, Albany, NY, USA
Abstract :
InGaSb material family with its higher hole transport properties are potential candidates for group III-V CMOS circuits. Understanding of the dominant scattering mechanisms is crucial for the development of future high speed, low power device applications. We present Hall mobility data of p-type InGaSb quantum well (QW) channels and derive the dominant scattering mechanisms related to the interface and trapped charges that degrade mobility in these structures.
Keywords :
CMOS integrated circuits; Hall mobility; III-V semiconductors; gallium compounds; indium compounds; low-power electronics; semiconductor quantum wells; Hall mobility data; InGaSb; buried QW; dominant scattering mechanisms; group III-V CMOS circuits; hole transport properties; low power device applications; p-type quantum well channels; trapped charges; CMOS integrated circuits; Capacitance-voltage characteristics; Hall effect; Indium gallium arsenide; Semiconductor device measurement; Thickness measurement;
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6256973
