DocumentCode
2828962
Title
InAs avalanche photodiode with improved electric field uniformity
Author
Maddox, S.J. ; Sun, W. ; Lu, Z. ; Nair, H.P. ; Campbell, J.C. ; Bank, S.R.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
fYear
2012
fDate
18-20 June 2012
Firstpage
253
Lastpage
254
Abstract
Here, we report a significant, ~5x, increase in the room temperature multiplication gain for InAs APD´s, as compared to the state-of-the-art at 10 V reverse bias.
Keywords
III-V semiconductors; avalanche photodiodes; indium compounds; InAs; avalanche photodiode; electric field uniformity; room temperature multiplication gain; voltage 10 V; Avalanche photodiodes; Current measurement; Doping profiles; Electric fields; Noise; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2012 70th Annual
Conference_Location
University Park, TX
ISSN
1548-3770
Print_ISBN
978-1-4673-1163-2
Type
conf
DOI
10.1109/DRC.2012.6256992
Filename
6256992
Link To Document