Switching dynamics in ferroelectric-charge hybrid nonvolatile memory

Author

Auluck, Kshitij ; Rajwade, Shantanu ; Kan, Edwin C.

Author_Institution

Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA

fYear

2012

fDate

18-20 June 2012

Firstpage

133

Lastpage

134

Abstract

A statistical model is proposed for ferroelectric (FE) polarization switching response during program and retention in FE-charge hybrid nonvolatile memory. During the program pulse, high fields first occur in the FE layer and then transfer to tunnel oxide after FE polarization, which leads to a two-step process: (a) rapid domain switching (~1ns - 100ns) and (b) electron injection into the floating gate (~10μs - 1ms). This device can be potentially used as a dual-mode memory with a fast low-retention mode (DRAM), and a slower high-retention mode (Flash).

Keywords

DRAM chips; ferroelectric storage; flash memories; DRAM; FE layer; FE polarization switching response; FE-charge hybrid nonvolatile memory; dual-mode memory; electron injection; ferroelectric polarization switching response; ferroelectric-charge hybrid nonvolatile memory; flash memory; floating gate; low-retention mode; program pulse; rapid domain switching; slower high-retention mode; statistical model; switching dynamics; tunnel oxide; two-step process; Abstracts; Educational institutions; Random access memory; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2012 70th Annual

Conference_Location

University Park, TX

ISSN

1548-3770

Print_ISBN

978-1-4673-1163-2

Type

conf

DOI

10.1109/DRC.2012.6257000

Filename

6257000