• DocumentCode
    2829227
  • Title

    MoS2-based devices and circuits

  • Author

    Radisavljevic, B. ; Krasnozhon, D. ; Whitwick, M.B. ; Kis, A.

  • Author_Institution
    Electr. Eng. Inst., EPFL, Lausanne, Switzerland
  • fYear
    2012
  • fDate
    18-20 June 2012
  • Firstpage
    179
  • Lastpage
    180
  • Abstract
    Two-dimensional crystals offer several inherent advantages over conventional 3D electronic materials or 1D nanomaterials such as nanotubes and nanowires. Their planar geometry makes it easier to fabricate circuits and complex structures by tailoring 2D layers into desired shapes. Because of their atomic scale thickness, 2D materials also represent the ultimate limit of miniaturization in the vertical dimension and allow the fabrication of shorter transistors due to enhanced electrostatic control. Another advantage of 2D semiconductors is that their electronic properties (band gap, mobility, work function) can be tuned for example by changing the number of layers or applying external electric fields.
  • Keywords
    electrostatics; geometry; molybdenum compounds; nanowires; semiconductor materials; semiconductor nanotubes; 1D nanomaterials; 2D layers; 2D materials; 2D semiconductors; MoS2-based circuits; MoS2-based devices; MoS2; atomic scale thickness; complex structures; conventional 3D electronic materials; electronic property; enhanced electrostatic control; external electric fields; miniaturization; nanotubes; nanowires; planar geometry; shorter transistors; two-dimensional crystals; vertical dimension;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2012 70th Annual
  • Conference_Location
    University Park, TX
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4673-1163-2
  • Type

    conf

  • DOI
    10.1109/DRC.2012.6257008
  • Filename
    6257008