DocumentCode
2829227
Title
MoS2-based devices and circuits
Author
Radisavljevic, B. ; Krasnozhon, D. ; Whitwick, M.B. ; Kis, A.
Author_Institution
Electr. Eng. Inst., EPFL, Lausanne, Switzerland
fYear
2012
fDate
18-20 June 2012
Firstpage
179
Lastpage
180
Abstract
Two-dimensional crystals offer several inherent advantages over conventional 3D electronic materials or 1D nanomaterials such as nanotubes and nanowires. Their planar geometry makes it easier to fabricate circuits and complex structures by tailoring 2D layers into desired shapes. Because of their atomic scale thickness, 2D materials also represent the ultimate limit of miniaturization in the vertical dimension and allow the fabrication of shorter transistors due to enhanced electrostatic control. Another advantage of 2D semiconductors is that their electronic properties (band gap, mobility, work function) can be tuned for example by changing the number of layers or applying external electric fields.
Keywords
electrostatics; geometry; molybdenum compounds; nanowires; semiconductor materials; semiconductor nanotubes; 1D nanomaterials; 2D layers; 2D materials; 2D semiconductors; MoS2-based circuits; MoS2-based devices; MoS2; atomic scale thickness; complex structures; conventional 3D electronic materials; electronic property; enhanced electrostatic control; external electric fields; miniaturization; nanotubes; nanowires; planar geometry; shorter transistors; two-dimensional crystals; vertical dimension;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2012 70th Annual
Conference_Location
University Park, TX
ISSN
1548-3770
Print_ISBN
978-1-4673-1163-2
Type
conf
DOI
10.1109/DRC.2012.6257008
Filename
6257008
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