• DocumentCode
    2829362
  • Title

    Transparent diamond-based electrolyzer for integration with solar cell

  • Author

    Pietzka, C. ; Gao, Z. ; Xu, Y. ; Kohn, E.

  • Author_Institution
    Inst. of Electron Devices & Circuits, Ulm Univ., Ulm, Germany
  • fYear
    2012
  • fDate
    18-20 June 2012
  • Firstpage
    279
  • Lastpage
    280
  • Abstract
    In this study a concept of an electrolyzer operating in rather aggressive solutions (and potentially salt water) and with the potential of monolithic integration with a solar cell structure has been presented. The electrolyzer structure is based on a metal dot modified CVD diamond electrode structure grown by HFCVD, a technique which can be scaled to large surface areas. Presently, only the III-Nitride semiconductor materials system seems compatible with the growth conditions required for high-quality NCD electrode material. However, here the incorporation of low bandgap InGaN quantum well structures would be needed, but is still outstanding.
  • Keywords
    III-V semiconductors; chemical vapour deposition; diamond; electrodes; gallium compounds; indium compounds; nitrogen compounds; quantum wells; solar cells; HFCVD; III-nitride semiconductor materials system; InGaN; diamond-based electrolyzer; electrolyzer structure; high-quality NCD electrode material; low bandgap quantum well structures; metal dot modified CVD diamond electrode structure; monolithic integration; salt water; solar cell structure; Abstracts; Diamond-like carbon; Silicon; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2012 70th Annual
  • Conference_Location
    University Park, TX
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4673-1163-2
  • Type

    conf

  • DOI
    10.1109/DRC.2012.6257014
  • Filename
    6257014