• DocumentCode
    2829555
  • Title

    A very reliable multilevel YSZ resistive switching memory

  • Author

    Pan, Feng ; Jang, Jaewon ; Subramanian, Vivek

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
  • fYear
    2012
  • fDate
    18-20 June 2012
  • Firstpage
    217
  • Lastpage
    218
  • Abstract
    We demonstrate an excellent Resistive Random Access Memory (RRAM) device based on Yttria Stabilized Zirconia (YSZ). Robust multilevel operation is achieved using incremental step pulse programming. Using this scheme, we realize excellent reliability, and further, demonstrate that oxygen vacancy-based cells are superior to metallic filament cells for multilevel operation.
  • Keywords
    circuit reliability; random-access storage; yttrium compounds; zirconium compounds; RRAM device; Y2O3; ZrO2; incremental step pulse programming; metallic filament cells; multilevel YSZ resistive switching memory; oxygen vacancy-based cells; reliability; resistive random access memory; yttria stabilized zirconia; Electrodes; Films; Gold; Noise; Reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2012 70th Annual
  • Conference_Location
    University Park, TX
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4673-1163-2
  • Type

    conf

  • DOI
    10.1109/DRC.2012.6257024
  • Filename
    6257024
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2829555