• DocumentCode
    282968
  • Title

    The modelling of passive circuit elements and FETs for analogue circuits

  • Author

    Howes, Michael J.

  • Author_Institution
    Leeds Univ., UK
  • fYear
    1988
  • fDate
    32169
  • Firstpage
    42430
  • Lastpage
    42435
  • Abstract
    The reliable design of gallium arsenide monolithic microwave integrated circuits (MMICs) requires accurate computer aided design software packages. At the present time most computer aided design (CAD) packages are based on equivalent circuit models derived from measured data. This approach relies on extensive experimental characterisation of devices and circuits after fabrication. Furthermore, the majority of CAD routines are limited to linear circuit models (or at best linearised models). Comprehensive physical device models have been developed for GaAs devices over the past six years and have been incorporated into simple MMIC design software. An important advantage of this approach is that since the model relies only on the material and fabrication process data it is possible to predict the device characteristics before fabrication. Unlike equivalent circuit models, there is no requirement for DC and RF measurements to derive the model, and a more flexible and general approach is assured
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave integrated circuits; semiconductor device models; CAD software packages; FETs; GaAs; MESFET; MMICs; analogue circuits; equivalent circuit models; modelling; passive circuit elements; physical device models;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Gallium Arsenide, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    208747