DocumentCode
283065
Title
Transistors for power switching
Author
Critchley, D.R. ; Jones, R.
Author_Institution
GEC Ind. Controls Ltd., Kidsgrove, UK
fYear
1988
fDate
32209
Firstpage
42401
Lastpage
42405
Abstract
Recent advances in bipolar transistor technology have been considerable. Transistors can now be applied economically and reliably to a wide range of power switching applications, many of which were impossible with other power semiconductors. The authors discuss the characteristics and application of transistors as high frequency power switches operating from supplies up to approximately 575V AC (1000V DC link maximum). Both standard triple Darlington bipolar transistors (`Triplingtons´) and the newer insulated gate bipolar transistors (IGBT) are considered
Keywords
bipolar transistors; power transistors; semiconductor switches; 1000 V; 575 V; bipolar transistor; high frequency power switches; insulated gate bipolar transistors; power semiconductors; power switching; semiconductor switches; triple Darlington bipolar transistors;
fLanguage
English
Publisher
iet
Conference_Titel
GTO's, Rival Devices and Applications, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
208903
Link To Document