• DocumentCode
    283065
  • Title

    Transistors for power switching

  • Author

    Critchley, D.R. ; Jones, R.

  • Author_Institution
    GEC Ind. Controls Ltd., Kidsgrove, UK
  • fYear
    1988
  • fDate
    32209
  • Firstpage
    42401
  • Lastpage
    42405
  • Abstract
    Recent advances in bipolar transistor technology have been considerable. Transistors can now be applied economically and reliably to a wide range of power switching applications, many of which were impossible with other power semiconductors. The authors discuss the characteristics and application of transistors as high frequency power switches operating from supplies up to approximately 575V AC (1000V DC link maximum). Both standard triple Darlington bipolar transistors (`Triplingtons´) and the newer insulated gate bipolar transistors (IGBT) are considered
  • Keywords
    bipolar transistors; power transistors; semiconductor switches; 1000 V; 575 V; bipolar transistor; high frequency power switches; insulated gate bipolar transistors; power semiconductors; power switching; semiconductor switches; triple Darlington bipolar transistors;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    GTO's, Rival Devices and Applications, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    208903