DocumentCode
283103
Title
An integrated silicon anemometer
Author
van Putten, A.F.P.
Author_Institution
Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
fYear
1988
fDate
32281
Firstpage
42461
Lastpage
42466
Abstract
Describes some aspects of the research, development and the practical implementation of silicon anemometers based on the measurement of a temperature gradient in an electrically heated piece of silicon, 1.5 mm square. A square Wheatstone bridge consists of four p-type diffused resistors with a sheet resistance of about 300 ohm and with a length-to-width ratio of 45:1. The chip is placed in a fluid with its plane parallel to the fluid to be measured. Based on thermal feedback biasing and the use of CMOS technology a fully integrated sensor can be designed. With the use of etching techniques, both the hot film and the hot wire configuration can be made. Ambient temperature changes can be treated as an independent variable
Keywords
CMOS integrated circuits; anemometers; bridge instruments; elemental semiconductors; etching; integrated circuit technology; semiconductor technology; silicon; 1.5 mm; 300 ohm; CMOS technology; Si; anemometer; etching; hot film; hot wire; integrated sensor; p-type diffused resistors; semiconductor technology; sheet resistance; square Wheatstone bridge; temperature gradient; thermal feedback biasing;
fLanguage
English
Publisher
iet
Conference_Titel
Solid State and Smart Sensors, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
208954
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