• DocumentCode
    283103
  • Title

    An integrated silicon anemometer

  • Author

    van Putten, A.F.P.

  • Author_Institution
    Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
  • fYear
    1988
  • fDate
    32281
  • Firstpage
    42461
  • Lastpage
    42466
  • Abstract
    Describes some aspects of the research, development and the practical implementation of silicon anemometers based on the measurement of a temperature gradient in an electrically heated piece of silicon, 1.5 mm square. A square Wheatstone bridge consists of four p-type diffused resistors with a sheet resistance of about 300 ohm and with a length-to-width ratio of 45:1. The chip is placed in a fluid with its plane parallel to the fluid to be measured. Based on thermal feedback biasing and the use of CMOS technology a fully integrated sensor can be designed. With the use of etching techniques, both the hot film and the hot wire configuration can be made. Ambient temperature changes can be treated as an independent variable
  • Keywords
    CMOS integrated circuits; anemometers; bridge instruments; elemental semiconductors; etching; integrated circuit technology; semiconductor technology; silicon; 1.5 mm; 300 ohm; CMOS technology; Si; anemometer; etching; hot film; hot wire; integrated sensor; p-type diffused resistors; semiconductor technology; sheet resistance; square Wheatstone bridge; temperature gradient; thermal feedback biasing;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Solid State and Smart Sensors, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    208954