• DocumentCode
    2831809
  • Title

    Thermoelectric power of a network of 6-nm Bi nanowires in a porous Vycor glass matrix

  • Author

    Huber, T.E. ; Celestine, K. ; Nikolaeva, A. ; Gitsu, A. ; Konopko, D. ; Huang, J. ; Graf, M.J.

  • Author_Institution
    Howard Univ., Washington, DC, USA
  • fYear
    2003
  • fDate
    17-21 Aug. 2003
  • Firstpage
    359
  • Lastpage
    362
  • Abstract
    Semiconductor quantum wires are a promising thermoelectric material because of the potential enhancement of the figure of merit in low dimensional materials. Recently, Heremans reported semiconducting behavior of the resistance and very large enhancements of the thermoelectric power of composites containing Bi nanowires with diameters of 9 nm and 15 nm embedded in silica and alumina matrices. The results are interpreted in terms of quantum confinement. We studied the magnetic field dependent resistance and Seebeck coefficient of a high density network of 6 nm diameter wires of Bi and Bi doped with 0.14 at.% of Te embedded in a well characterized monolithic porous silica (porous Vycor glass from Corning) in order to observe the expected properties. R increases weakly for decreasing temperature for these composites. The observed behaviour corresponds closely to that found by Heremans. However, in contrast to Heremans´ results, we find that the composites´s thermoelectric power is metallic (d|S|/dT> 0) and of the order of magnitude of the thermoelectric power of bulk Bi. Our results are interpreted in terms of a model of surface charges that spoil the semimetal-to-semiconductor transition of quantum wires.
  • Keywords
    Seebeck effect; bismuth; nanowires; semiconductor quantum wires; thermoelectric power; 6 nm; 6-nm Bi nanowires; 9 to 15 nm; Seebeck coefficient; alumina matrices; figure of merit; magnetic field dependent resistance; porous Vycor glass matrix; semiconductor quantum wires; semimetal-to-semiconductor transition; silica matrices; surface charges; thermoelectric power; Bismuth; Glass; Magnetic materials; Nanowires; Semiconductivity; Semiconductor materials; Silicon compounds; Thermal resistance; Thermoelectricity; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
  • Print_ISBN
    0-7803-8301-X
  • Type

    conf

  • DOI
    10.1109/ICT.2003.1287522
  • Filename
    1287522