DocumentCode
283189
Title
Modelling power MOSFETs for SPICE circuit simulation; a review and discussion
Author
Haslam, David Frank
fYear
1988
fDate
32252
Firstpage
42370
Lastpage
42378
Abstract
Power semiconductor manufacturers are becoming increasingly aware that there is a need to have better models for their components for use with CAD analogue simulation tools such as the SPICE program developed originally by the University of California (Berkeley). This paper examines one family of devices, power MOSFETs, and describes some of the existing models which have been proposed in attempt to come to terms with the inadequacies of the ordinary SPICE 2 model for MOSFETs
fLanguage
English
Publisher
iet
Conference_Titel
Large Signal Device Models and Parameter Extractions for Circuit Simulation, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
209085
Link To Document