Title :
Parameter extraction for non-linear MESFET models
Author :
Jastrzebski, A.K.
Author_Institution :
Electron. Eng. Labs., Kent Univ., Canterbury, UK
Abstract :
The proposed non-linear MESFET modelling method has proved to be both accurate and efficient. The method can be used for quasi-static and dispersion modelling and requires only typical S-parameter and DC measurements. The new model shows an excellent agreement with measurements for both DC-characteristics and for the small-signal S-parameters over wide range of bias conditions and frequencies. A first example of an accurate non-linear MESFET model for a dispersive device was presented
Keywords :
Schottky gate field effect transistors; semiconductor device models; DC measurements; DC-characteristics; S-parameter; bias conditions; dispersion modelling; dispersive device; frequencies; nonlinear MESFET models; small-signal S-parameters;
Conference_Titel :
Large Signal Device Models and Parameter Extractions for Circuit Simulation, IEE Colloquium on
Conference_Location :
London
