DocumentCode
283193
Title
Parameter extraction and optimisation using TECAP software
Author
Oakley, A.
Author_Institution
Applications Project Centre, Hewlett-Packard Ltd., Pinewood, UK
fYear
1988
fDate
32252
Firstpage
42491
Lastpage
42494
Abstract
Describes the various parameter extraction and optimisation techniques adopted using Hewlett-Packard´s Transistor Electrical Characterisation and Analysis Program (TECAP) for the Berkeley MOS, Bipolar and Gallium Arsenide Solid State Device Models. The models are discussed and some of the fundamental concepts of extraction and optimisation described. Modelling concepts, measurement techniques, parameter extraction, parameter optimisation and device simulation are covered
Keywords
circuit CAD; optimisation; semiconductor device models; Berkeley MOS; Bipolar; Solid State Device Models; TECAP software; Transistor Electrical Characterisation and Analysis Program; device simulation; extraction; measurement techniques; optimisation techniques; parameter extraction; parameter optimisation;
fLanguage
English
Publisher
iet
Conference_Titel
Large Signal Device Models and Parameter Extractions for Circuit Simulation, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
209089
Link To Document