Statistics of microstructure for via metallization and implication for electromigration reliability

Author

Toyoda, Hiroshi ; Wang, Pei-hua ; Ho, Paul S.

Author_Institution

Center for Mater. Sci. & Eng., Texas Univ., Austin, TX, USA

fYear

1998

fDate

March 31 1998-April 2 1998

Firstpage

324

Lastpage

328

Abstract

Damage formation due to electromigration (EM) in 0.6 /spl mu/m AlCu via/line interconnect structures has been found to be dominated by void formation at grain boundaries near vias. Electron backscatter diffraction (EBSD) was used to analyze the grain structure, and it was found that the orientations of grains near vias show a higher frequency of deviation from (111). The damage formation can be directly correlated to the local grain misorientation. The implication of this result for EM reliability is discussed.

Keywords

aluminium alloys; copper alloys; electromigration; electron backscattering; electron diffraction; grain boundaries; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; voids (solid); 0.6 micron; AlCu; AlCu via/line interconnect structures; EM damage formation; EM reliability; damage formation; electromigration; electromigration reliability; electron backscatter diffraction; grain boundaries; grain orientation; grain structure; local grain misorientation; microstructure statistics; via metallization; void formation; Cathodes; Electromigration; Grain boundaries; Laboratories; Metallization; Microstructure; Reliability engineering; Scanning electron microscopy; Statistics; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International

Conference_Location

Reno, NV, USA

Print_ISBN

0-7803-4400-6

Type

conf

DOI

10.1109/RELPHY.1998.670664

Filename

670664