Ti layer thickness dependence on electromigration performance of Ti-AlCu metallization

Author

Hosaka, Masaya ; Kouno, Takahiro ; Hayakawa, Yukio ; Niwa, Hideo ; Yamada, Masao

Author_Institution

Fujitsu Labs. Ltd., Kanagawa, Japan

fYear

1998

fDate

March 31 1998-April 2 1998

Firstpage

329

Lastpage

334

Abstract

Electromigration lifetime tests on TiN-Ti-AlCu-TiN-Ti stacked structures with various upper Ti film thicknesses have been carried out on two-level interconnect structures connected with W-plugs. We found that a high electromigration resistance was obtained with thin Ti, resulting in an island shaped Al/sub 3/Ti intermetallic. This result is inconsistent with a well-known bypass model. We propose a new model in which the Al/sub 3/Ti-Al interface mass transport is faster than that of others.

Keywords

aluminium alloys; copper alloys; discontinuous metallic thin films; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; interface states; life testing; titanium; Al/sub 3/Ti-Al; Al/sub 3/Ti-Al interface mass transport model; Ti layer thickness; Ti-AlCu metallization; TiN-Ti-AlCu-TiN-Ti; TiN-Ti-AlCu-TiN-Ti stacked structures; W; W-plugs; bypass model; electromigration lifetime tests; electromigration performance; electromigration resistance; island shaped Al/sub 3/Ti intermetallic; two-level interconnect structures; upper Ti film thickness; Annealing; Artificial intelligence; Electrical resistance measurement; Electromigration; Metallization; Performance evaluation; Sputter etching; Testing; Tin; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International

Conference_Location

Reno, NV, USA

Print_ISBN

0-7803-4400-6

Type

conf

DOI

10.1109/RELPHY.1998.670665

Filename

670665