Title :
Ti layer thickness dependence on electromigration performance of Ti-AlCu metallization
Author :
Hosaka, Masaya ; Kouno, Takahiro ; Hayakawa, Yukio ; Niwa, Hideo ; Yamada, Masao
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa, Japan
fDate :
March 31 1998-April 2 1998
Abstract :
Electromigration lifetime tests on TiN-Ti-AlCu-TiN-Ti stacked structures with various upper Ti film thicknesses have been carried out on two-level interconnect structures connected with W-plugs. We found that a high electromigration resistance was obtained with thin Ti, resulting in an island shaped Al/sub 3/Ti intermetallic. This result is inconsistent with a well-known bypass model. We propose a new model in which the Al/sub 3/Ti-Al interface mass transport is faster than that of others.
Keywords :
aluminium alloys; copper alloys; discontinuous metallic thin films; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; interface states; life testing; titanium; Al/sub 3/Ti-Al; Al/sub 3/Ti-Al interface mass transport model; Ti layer thickness; Ti-AlCu metallization; TiN-Ti-AlCu-TiN-Ti; TiN-Ti-AlCu-TiN-Ti stacked structures; W; W-plugs; bypass model; electromigration lifetime tests; electromigration performance; electromigration resistance; island shaped Al/sub 3/Ti intermetallic; two-level interconnect structures; upper Ti film thickness; Annealing; Artificial intelligence; Electrical resistance measurement; Electromigration; Metallization; Performance evaluation; Sputter etching; Testing; Tin; Ultra large scale integration;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International
Conference_Location :
Reno, NV, USA
Print_ISBN :
0-7803-4400-6
DOI :
10.1109/RELPHY.1998.670665
