DocumentCode
283272
Title
A 15 W, 14-14.5 GHz solid state power amplifier
Author
Cheng, T.C.
Author_Institution
SSPA Microwave Corp., Mississauga, Ont., Canada
fYear
1988
fDate
32272
Firstpage
42401
Lastpage
42406
Abstract
With the recent advancement of GaAs MESFET device technology, the power output capability of MESFETs has been increasing steadily. The solid state power amplifiers developed up to the present in C-band to Ku-band frequencies have superior performances and can replace TWT amplifiers in a communication system. SSPA Microwave Corporation 15 watt, 14-14.5 GHz solid state power amplifier which has been developed and manufactured successfully is described
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave amplifiers; microwave integrated circuits; monolithic integrated circuits; 14.0 to 14.5 GHz; 15 W; C-band; GaAs; III-V semiconductors; Ku-band; MESFET device technology; SSPA Microwave Corporation; communication system; power output; solid state power amplifiers;
fLanguage
English
Publisher
iet
Conference_Titel
Microwave Components in Telecommunications, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
209209
Link To Document