Title :
Integrated microwave continuous-time active filters using fully tunable GaAs transconductors
Author :
Toumazou, C. ; Haigh, D.G.
Author_Institution :
Dept. of Electr. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
Abstract :
Precision active filters at microwave frequencies implemented using gallium arsenide (GaAs) MESFET technology offer the potential advantages of tunable response, small size, and low weight. Realization is based on a transconductor-C network, where the GaAs MESFET transconductor has effective tuning by adjustment of the tail current in a differential pair, with appropriate cascoding and level-shifting techniques and Q-factor adjustment using a novel linear voltage-controlled resistor circuit. Simulation of a second-order Q =10 bandpass filter verifies filtering at 1 GHz
Keywords :
III-V semiconductors; MMIC; Q-factor; Schottky gate field effect transistors; active filters; band-pass filters; field effect integrated circuits; gallium arsenide; microwave filters; tuning; 1 GHz; MESFET technology; MMIC; Q-factor adjustment; UHF; bandpass filter; cascoding; continuous-time active filters; differential pair; fully tunable GaAs transconductors; level-shifting techniques; linear voltage-controlled resistor circuit; microwave frequencies; transconductor-C network; tunable response; Active filters; Band pass filters; Circuit optimization; Gallium arsenide; MESFET circuits; Microwave frequencies; Microwave technology; Tail; Transconductors; Tunable circuits and devices;
Conference_Titel :
Circuits and Systems, 1991., IEEE International Sympoisum on
Print_ISBN :
0-7803-0050-5
DOI :
10.1109/ISCAS.1991.176745
