• DocumentCode
    2833253
  • Title

    Micro thermoelectric cooler fabrication: growth and characterization of patterned Sb2Te3 and Bi2Te3 films

  • Author

    da Silva, Luciana W. ; Kaviany, Massoud ; DeHennis, Andrew ; Dyck, Jeffrey S.

  • Author_Institution
    Dept. of Mech. Eng., Michigan Univ., Ann Arbor, MI, USA
  • fYear
    2003
  • fDate
    17-21 Aug. 2003
  • Firstpage
    665
  • Lastpage
    668
  • Abstract
    A column-type micro thermoelectric cooler is being fabricated using p-type Sb2Te3 and n-type Bi2Te3 films (approximately 4 μm thick). The films are grown by thermal co-evaporation and patterned on Cr/Au/Ti/Pt (hot) connectors, which are deposited onto a silicon dioxide coated wafer. The column height is limited by control of the Te deposition rate. Although a high substrate temperature during thermoelectric film deposition is desired, it has been limited by the degradation of the photoresist used for patterning. The measured Seebeck coefficient and electrical resistivity of the thermoelectric films are reported, and preliminary results show that excess tellurium increases the Seebeck coefficient.
  • Keywords
    antimony compounds; bismuth compounds; cooling; pattern formation; semiconductor growth; semiconductor thin films; thermoelectric conversion; thermoelectricity; vacuum deposited coatings; 4 micron; Bi2Te3; Cr-Au-Ti-Pt; Sb2Te3; Seebeck coefficient; Te deposition rate; column height; electrical resistivity; high substrate temperature; micro thermoelectric cooler fabrication; patterned Bi2Te3 films; patterned Sb2Te3 films; photoresist; thermal co-evaporation; Bismuth; Chromium; Connectors; Fabrication; Gold; Semiconductor films; Silicon compounds; Substrates; Tellurium; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
  • Print_ISBN
    0-7803-8301-X
  • Type

    conf

  • DOI
    10.1109/ICT.2003.1287600
  • Filename
    1287600