DocumentCode
2833253
Title
Micro thermoelectric cooler fabrication: growth and characterization of patterned Sb2Te3 and Bi2Te3 films
Author
da Silva, Luciana W. ; Kaviany, Massoud ; DeHennis, Andrew ; Dyck, Jeffrey S.
Author_Institution
Dept. of Mech. Eng., Michigan Univ., Ann Arbor, MI, USA
fYear
2003
fDate
17-21 Aug. 2003
Firstpage
665
Lastpage
668
Abstract
A column-type micro thermoelectric cooler is being fabricated using p-type Sb2Te3 and n-type Bi2Te3 films (approximately 4 μm thick). The films are grown by thermal co-evaporation and patterned on Cr/Au/Ti/Pt (hot) connectors, which are deposited onto a silicon dioxide coated wafer. The column height is limited by control of the Te deposition rate. Although a high substrate temperature during thermoelectric film deposition is desired, it has been limited by the degradation of the photoresist used for patterning. The measured Seebeck coefficient and electrical resistivity of the thermoelectric films are reported, and preliminary results show that excess tellurium increases the Seebeck coefficient.
Keywords
antimony compounds; bismuth compounds; cooling; pattern formation; semiconductor growth; semiconductor thin films; thermoelectric conversion; thermoelectricity; vacuum deposited coatings; 4 micron; Bi2Te3; Cr-Au-Ti-Pt; Sb2Te3; Seebeck coefficient; Te deposition rate; column height; electrical resistivity; high substrate temperature; micro thermoelectric cooler fabrication; patterned Bi2Te3 films; patterned Sb2Te3 films; photoresist; thermal co-evaporation; Bismuth; Chromium; Connectors; Fabrication; Gold; Semiconductor films; Silicon compounds; Substrates; Tellurium; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
Print_ISBN
0-7803-8301-X
Type
conf
DOI
10.1109/ICT.2003.1287600
Filename
1287600
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