Title :
Heavy ions evaluation of GaAs microwave devices
Author :
Barillot, Catherine ; Bensoussan, Alain ; Brasseau, Francis ; Calve, Philippe
Author_Institution :
Alcatel Espace, Toulouse, France
Abstract :
Four GaAs processes were evaluated under Heavy ion testing in order to estimate their sensitivity to Single Event Burnout. Different bias were applied. Burnout has been achieved for the higher voltages, but the hardness of these four processes has been confirmed for nominal space applications up to the maximum rating conditions
Keywords :
III-V semiconductors; gallium arsenide; ion beam effects; microwave field effect transistors; radiation hardening (electronics); space vehicle electronics; GaAs; GaAs microwave device; heavy ion testing; radiation hardness; single event burnout; space applications; Assembly; Gallium arsenide; HEMTs; MESFETs; MMICs; MODFETs; Microwave devices; Microwave transistors; Testing; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 1996., IEEE
Conference_Location :
Indian Wells, CA
Print_ISBN :
0-7803-3398-5
DOI :
10.1109/REDW.1996.574195
