Title :
Stable current and voltage generation under process variation
Author :
Melikyan, V. ; Karapetyan, Sh ; Mirzoyan, D. ; Babayan, E.
Author_Institution :
Synopsys Armenia CJSC, Yerevan, Armenia
Abstract :
A new stable current and voltage generation method is proposed. It allows obtaining stable operating point under process variation (PV) using well-known self-bias technique. Stability against various process corners is achieved using only one type of transistor as current (voltage) generating elements. Owing to its simplicity and versatility such method allows obtaining small area and power consumption. Worst-case and Monte-Carlo simulations prove that the voltage generated with the aid of proposed circuit (method) is stable over PV.
Keywords :
MOSFET; Monte Carlo methods; circuit stability; semiconductor device models; MOS transistor; MOSFET; Monte-Carlo simulation; current generation method; process variation; self-bias technique; semiconductor device stability; stable operating point; voltage generation method; worst-case simulation; Circuit stability; MOSFETs; Resistors; Stability analysis; Thermal stability; Threshold voltage;
Conference_Titel :
Design & Test Symposium (EWDTS), 2010 East-West
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4244-9555-9
DOI :
10.1109/EWDTS.2010.5742132