The implementation of a 144 element gate array in heterojunction bipolar transistors

Author

Parton, J.G. ; Topham, P.J. ; Golder, M.J. ; Goodfellow, R.C.

Author_Institution

Plessey Res. (Caswell

fYear

1988

fDate

32458

Firstpage

42614

Lastpage

42617

Abstract

The authors detail the design, fabrication and assessment of an ECL/CML gate array using GaAlAs-GaAs HBTs. The purpose of the work was to investigate high speed, moderate complexity uncommitted logic arrays. The customisations employed include a four channel multiplexer and a divide by eight circuit. Operating speeds up to 3.1 GHz have been measured with these circuits

Keywords

III-V semiconductors; aluminium compounds; application specific integrated circuits; bipolar integrated circuits; emitter-coupled logic; gallium arsenide; heterojunction bipolar transistors; logic arrays; 3.1 GHz; ASIC; ECL/CML gate array; GaAlAs-GaAs; HBTs; III-V semiconductors; bipolar IC; customisations; divide by eight circuit; four channel multiplexer; heterojunction bipolar transistors; high speed; moderate complexity; semicustom circuits; uncommitted logic arrays;

fLanguage

English

Publisher

iet

Conference_Titel

Microwave and Millimetre Wave Monolithic Integrated Circuits, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

209619

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=283578