• DocumentCode
    283597
  • Title

    Indium phosphide solar cells

  • Author

    Hill, R. ; Pearsall, N.M.

  • Author_Institution
    Newcastle Photovoltaics Applications Centre, Newcastle Polytech., UK
  • fYear
    1988
  • fDate
    32462
  • Firstpage
    42401
  • Lastpage
    42405
  • Abstract
    The ideal solar cells for use in space have a high power to mass ratio and a high resistance to radiation. To date, flat panels using cells based on single crystal silicon or gallium arsenide have been used on space flights, although development programmes have considered the use of cells based on other materials and alternative panel designs, such as the use of concentration. One of the promising materials for space solar cells is the III-V semiconductor indium phosphide, which has shown good performance in both homojunction and heterojunction structures. Radiation resistance tests performed to date imply significantly less performance degradation than for cells based on either silicon or gallium arsenide. The authors review the present status of indium phosphide based cells and discuss their potential
  • Keywords
    III-V semiconductors; indium compounds; solar cells; space vehicle power plants; III-V semiconductor; InP solar cells; concentration; development; heterojunction structures; homojunction structures; panel designs; performance; power to mass ratio; radiation resistance; space vehicle power plants;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Solar Cells for Space Applications, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    209641