DocumentCode
283597
Title
Indium phosphide solar cells
Author
Hill, R. ; Pearsall, N.M.
Author_Institution
Newcastle Photovoltaics Applications Centre, Newcastle Polytech., UK
fYear
1988
fDate
32462
Firstpage
42401
Lastpage
42405
Abstract
The ideal solar cells for use in space have a high power to mass ratio and a high resistance to radiation. To date, flat panels using cells based on single crystal silicon or gallium arsenide have been used on space flights, although development programmes have considered the use of cells based on other materials and alternative panel designs, such as the use of concentration. One of the promising materials for space solar cells is the III-V semiconductor indium phosphide, which has shown good performance in both homojunction and heterojunction structures. Radiation resistance tests performed to date imply significantly less performance degradation than for cells based on either silicon or gallium arsenide. The authors review the present status of indium phosphide based cells and discuss their potential
Keywords
III-V semiconductors; indium compounds; solar cells; space vehicle power plants; III-V semiconductor; InP solar cells; concentration; development; heterojunction structures; homojunction structures; panel designs; performance; power to mass ratio; radiation resistance; space vehicle power plants;
fLanguage
English
Publisher
iet
Conference_Titel
Solar Cells for Space Applications, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
209641
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