The composition of phosphorus and arsenic vapor in view of thermal processing of III-V wafers

Author

Kortus, J. ; Roth, K. ; Herms, M. ; Porezag, D.V. ; Pederson, M.R.

Author_Institution

Inst. of Theor. Phys., Tech. Univ. Bergakademie Freiburg, Germany

fYear

1998

fDate

11-15 May 1998

Firstpage

533

Lastpage

536

Abstract

In-situ Raman scattering results on vapor of phosphorus and arsenic at temperatures up to 1400 K are presented. The ratio of partial pressures of the dimer and the tetramer is proportional to the ratio of the corresponding Raman intensities. With respect to the quantitative comparison of the experimental Raman data with thermodynamical calculation (ChernSage) the Raman activities were determined by first principles calculations on these molecules. In particular, we comment on the presence of trimer components in these gases as conjectured in thermodynamics

Keywords

III-V semiconductors; Raman spectra; heat treatment; semiconductor doping; semiconductor growth; 1400 K; As; As vapour; III-V wafers; P; P vapour; Raman scattering; first principles calculations; thermal processing; thermodynamics; Annealing; Atmosphere; Crystals; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Physics; Raman scattering; Temperature; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712580

Filename

712580