• DocumentCode
    2838877
  • Title

    An operational amplifier for high performance pipelined ADCs in 65nm CMOS

  • Author

    Payami, Saifullah ; Ojani, Amin

  • Author_Institution
    Dept. of Electr. Eng., Linkoping Univ., Linkoping, Sweden
  • fYear
    2012
  • fDate
    12-13 Nov. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A CMOS fully differential high gain-bandwidth (GBW) product operational amplifier (OpAmp) is presented in this paper. In order to achieve a high gain, the Nested gain-boosting technique [1] is employed. The design is implemented in a 1.1V standard 65nm CMOS process. The DC-gain of the OpAmp is larger than 77.9dB with the unity-gain frequency of 4.61GHz while achieving 76.2 degrees of phase margin (PM). Applying the maximum input swing, the output signal settles to 0.01% accuracy in less than 3.8ns. The output total harmonic distortion (THD) of the OpAmp is 0.586% for maximum signal swing at the frequencies near Nyquist frequency with the input-referred noise of 5.4nV/√Hz. The high GBW product of this design makes it suitable for 12-bit 200MS/s pipelined ADC applications.
  • Keywords
    CMOS integrated circuits; analogue-digital conversion; field effect MMIC; operational amplifiers; CMOS; DC gain; Nyquist frequency; frequency 4.61 GHz; fully differential operational amplifier; high gain bandwidth product operational amplifier; high performance pipelined ADC; nested gain boosting technique; output total harmonic distortion; phase margin; size 65 nm; voltage 1.1 V; Boosting; CMOS integrated circuits; CMOS technology; Capacitors; Impedance; MOS devices; Noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    NORCHIP, 2012
  • Conference_Location
    Cpenhagen
  • Print_ISBN
    978-1-4673-2221-8
  • Electronic_ISBN
    978-1-4673-2222-5
  • Type

    conf

  • DOI
    10.1109/NORCHP.2012.6403114
  • Filename
    6403114