DocumentCode
2838877
Title
An operational amplifier for high performance pipelined ADCs in 65nm CMOS
Author
Payami, Saifullah ; Ojani, Amin
Author_Institution
Dept. of Electr. Eng., Linkoping Univ., Linkoping, Sweden
fYear
2012
fDate
12-13 Nov. 2012
Firstpage
1
Lastpage
4
Abstract
A CMOS fully differential high gain-bandwidth (GBW) product operational amplifier (OpAmp) is presented in this paper. In order to achieve a high gain, the Nested gain-boosting technique [1] is employed. The design is implemented in a 1.1V standard 65nm CMOS process. The DC-gain of the OpAmp is larger than 77.9dB with the unity-gain frequency of 4.61GHz while achieving 76.2 degrees of phase margin (PM). Applying the maximum input swing, the output signal settles to 0.01% accuracy in less than 3.8ns. The output total harmonic distortion (THD) of the OpAmp is 0.586% for maximum signal swing at the frequencies near Nyquist frequency with the input-referred noise of 5.4nV/√Hz. The high GBW product of this design makes it suitable for 12-bit 200MS/s pipelined ADC applications.
Keywords
CMOS integrated circuits; analogue-digital conversion; field effect MMIC; operational amplifiers; CMOS; DC gain; Nyquist frequency; frequency 4.61 GHz; fully differential operational amplifier; high gain bandwidth product operational amplifier; high performance pipelined ADC; nested gain boosting technique; output total harmonic distortion; phase margin; size 65 nm; voltage 1.1 V; Boosting; CMOS integrated circuits; CMOS technology; Capacitors; Impedance; MOS devices; Noise;
fLanguage
English
Publisher
ieee
Conference_Titel
NORCHIP, 2012
Conference_Location
Cpenhagen
Print_ISBN
978-1-4673-2221-8
Electronic_ISBN
978-1-4673-2222-5
Type
conf
DOI
10.1109/NORCHP.2012.6403114
Filename
6403114
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