Title :
Integrated resistor material with zero temperature coefficient of resistance and high stability
Author :
Wu, Fan ; Morris, James E.
Author_Institution :
Microelectron. Center, Medtronic Inc., Tempe, AZ, USA
Abstract :
The dependence of the resistivity of on-chip SiOxCr1-x thin film resistors on process parameters were studied in this paper. The study presented here focuses on the dependence of the resistivity on different substrates. Atomic force microscopy, electrical force microscopy, and Transmission Electron Microscopy have been used in studying the morphology of the substrates and the resistor films deposited on them by magnetron sputtering. A relationship between the film resistivity and the substrate stress was observed. A qualitative model is presented to explain the electrical characteristics of the films.
Keywords :
atomic force microscopy; cermets; electrical resistivity; silicon compounds; sputter deposition; surface morphology; thermal stability; thin film resistors; transmission electron microscopy; SiOCr; atomic force microscopy; cermet; electrical force microscopy; electrical resistivity; high stability; integrated resistor material; magnetron sputtered films; on-chip thin film resistors; process parameters; substrate stress; transmission electron microscopy; zero temperature coefficient of resistance; Atomic force microscopy; Chromium; Conductivity; Magnetic force microscopy; Resistors; Stability; Substrates; Temperature; Transistors; Transmission electron microscopy;
Conference_Titel :
Advanced Packaging Materials: Processes, Properties and Interfaces, 2004. Proceedings. 9th International Symposium on
Print_ISBN :
0-7803-8436-9
DOI :
10.1109/ISAPM.2004.1287994
