DocumentCode
2839749
Title
Extended cavity lasers in InGaAs-InGaAsP and InGaAlP-GaAs multi-quantum well structure using a sputtered SiO2 technique
Author
Qiu, B.C. ; Hamilton, C.J. ; Ke, M.L. ; Kowalski, O.P. ; McDougall, S.D. ; Bryce, A.C. ; Marsh, J.H.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear
1998
fDate
11-15 May 1998
Firstpage
635
Lastpage
638
Abstract
Sputtering a thin layer of SiO2 (≈200 nm) followed by high temperature annealing has recently been found to be very promising in promoting quantum well intermixing. The intermixing is thought to be due to point defects generated by the sputtering plasma diffusing through the material during a subsequent high temperature anneal. The process uses simple low-cost techniques, and is extremely reproducible and reliable. In this paper we describe the technique using the sputtered SiO2 and subsequent high temperature annealing, either by rapid thermal annealer (RTA) or CW Nd:YAG laser operated at 1.064 μm. Differential blue shifts of up to 60 meV and 120 meV have been obtained for InGaAs/InGaAsP and GaInP/AlGaInP material systems. Extended cavity lasers have been fabricated and characterised for both material systems
Keywords
III-V semiconductors; aluminium compounds; chemical interdiffusion; gallium arsenide; gallium compounds; indium compounds; point defects; quantum well lasers; rapid thermal annealing; silicon compounds; spectral line shift; sputter deposition; InGaAlP-GaAs; InGaAlP-GaAs multi-quantum well structure; InGaAs-InGaAsP; InGaAs-InGaAsP multi-quantum well structure; RTA; SiO2; blue shifts; extended cavity lasers; high temperature annealing; low-cost techniques; point defects; quantum well intermixing; sputtered SiO2 technique; sputtering plasma; Absorption; Costs; Indium gallium arsenide; Indium phosphide; Optical control; Optical devices; Optical materials; Plasma temperature; Rapid thermal annealing; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712703
Filename
712703
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