Reliability of Al/Ti gate AlGaAs/GaAs power HFETs in hydrogen gas

Author

Menozzi, R. ; Gaddi, R. ; Nava, F. ; Lanzieri, C. ; Canali, C.

Author_Institution

Dipt. di Ingegneria dell´´Inf., Parma Univ., Italy

fYear

1998

fDate

1998

Firstpage

75

Lastpage

81

Abstract

Here we approach for the first time the problem of hydrogen poisoning for Al/Ti-gate (Pt-free) AlGaAs/GaAs power HFETs. Throughout the stress, we have monitored the changes of I_DSS, g_m, threshold voltage (V_T) and gate barrier height (Φ _B) The separate measurement of the shifts of V_T and Φ_B allows us to gain new insight of the mechanisms underlying the device changes during hydrogen exposure. Moreover, by measuring the source-gate and drain-gate breakdown voltages, as well as the g_m frequency dispersion, we can speculate on the effect of hydrogenation on the access regions on the gate sides

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; hydrogenation; life testing; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; 180 C; Al-Ti; Al/Ti gate AlGaAs/GaAs power HFETs; AlGaAs-GaAs; H₂ gas; accelerated stress tests; access regions; double-recessed process; drain-gate breakdown voltage; frequency dispersion; gate barrier height; hydrogen exposure; hydrogen poisoning; hydrogenation; reliability; source-gate breakdown voltage; threshold voltage; Decision support systems; Frequency measurement; Gain measurement; Gallium arsenide; HEMTs; Hydrogen; MODFETs; Monitoring; Stress measurement; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 1998. Proceedings

Conference_Location

Atlanta, GA

Print_ISBN

0-7908-0065-9

Type

conf

DOI

10.1109/GAASRW.1998.768040

Filename

768040