DocumentCode
2840327
Title
A hybrid FinFET/SOI MOSFET
Author
Zhang, Wensheng ; Fossum, Jerry G. ; Mathew, Lini
Author_Institution
Florida Univ., Gainesville, FL, USA
fYear
2005
fDate
3-6 Oct. 2005
Firstpage
151
Lastpage
153
Abstract
In this paper, process/physics-based generic compact model for DG MOSFETs, UFDG (Fossum, 2004), in Spice3, combined with simulations done with the 3D numerical simulator Davinci (2003), to gain insights regarding the design and performance of this hybrid device, which we call the inverted-T FET (ITFET) because of its cross-sectional shape we used. Based on UFDG/Spice3 simulations, we also note the potential benefit of the ITFET in effecting a good design of the FinFET-CMOS 6T-SRAM cell with regard to the area-performance tradeoff.
Keywords
CMOS memory circuits; MOSFET; SPICE; SRAM chips; semiconductor device models; silicon-on-insulator; 3D numerical simulator; CMOS 6T-SRAM cell; DG MOSFET; FinFET; SOI MOSFET; UFDG/Spice3 simulations; generic compact model; hybrid device; inverted-T FET; CMOS technology; FETs; FinFETs; High K dielectric materials; High-K gate dielectrics; Instruments; MOSFET circuits; Microelectronics; Semiconductor device noise; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-9212-4
Type
conf
DOI
10.1109/SOI.2005.1563570
Filename
1563570
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